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1 article(s) from Sarmanova, Marina

Nanometer-resolved mechanical properties around GaN crystal surface steps

Jörg Buchwald,
Marina Sarmanova,
Bernd Rauschenbach and
Stefan G. Mayr

Beilstein J. Nanotechnol. 2014, 5, 2164–2170, doi:10.3762/bjnano.5.225

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Figure 1: MD configuration of a GaN step with a step height of h = 2c during indentation of surface atoms wit...

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Figure 2: Stress fluctuation multiplied by the squared per-atom volume [Graphic 3] along the y-axis of the upper Ga atom...

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Figure 3: Local [001]-oriented indentation modulus for three different step heights along the y-axis. Measure...

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Figure 4: [001]-oriented indentation modulus for three different step heights along y. Measured by indenting ...

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Figure 5: Schematic FEM configuration of the indentation on top of the step by using a flatpunch indenter.

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Figure 6: FEM simulation of indentation modulus for three different step heights by using a flatpunch indente...

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Figure 7: Topography (a) and indentation modulus (b) map of the area around a GaN step.

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Full Research Paper

Published 19 Nov 2014

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